Archives of Acoustics, 28, 2, pp. , 2003

Interpretation of the piezoelectric photothermal spectra of p-type silicon samples

M. Maliński
Faculty of Electronics, Technical University of Koszalin Partyzantów

A. Memon
Faculty of Electronics, Technical University of Koszalin Partyzantów

T. Ikari
Department of Electrical and Electronic Engineering

This paper presents both experimental and theoretical
amplitude and phase piezoelectric photothermal spectra (PPTS) of p-type silicon
samples. two dominant peaks at 1.07 eV and 1.18 eV were observed in PPT spectra
at room temperature. The relative intensities of these peaks change by a surface
treatment. Numerical analysis is performed by supposing that an inactive layer
exists at the sample surface. The characteristic structure observed in the
piezoelectric amplitude spectra of p-Si samples is well explained by the model
proposed for multilayer structure. We found that the proposed inactive layer
model is quite helpful in investigating the surface properties of a
semiconductor material.
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